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| HUR2X30-60 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227(ISOTOP) Dim. A B C D E F G H J K L M N O P Q Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 37.80 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 3.30 0.780 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.20 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 4.57 0.830 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.489 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 0.130 19.81 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 0.180 21.08 HUR2X30-60 VRSM V 600 VRRM V 600 R S T U V W Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot VISOL Md Weight TC=25oC 50/60Hz, RMS _ IISOL<1mA Test Conditions TC=95oC; rectangular, d=0.5 TVJ=45oC; tp=10ms (50Hz), sine TVJ=25 C; non-repetitive; IAS=1A; L=180uH VA=1.5.VR typ.; f=10kHz; repetitive o Maximum Ratings 70 30 250 0.2 0.1 -40...+150 150 -40...+150 100 2500 1.1-1.5/9-13 1.1-1.5/9-13 30 Unit A A mJ A o C W V~ Nm/lb.in. g mounting torque (M4) terminal connection torque (M4) typical HUR2X30-60 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Symbol TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM IF=30A; TVJ=125oC TVJ=25oC Test Conditions Characteristic Values typ. max. 0.25 1 1.30 1.58 1.15 0.1 Unit IR VF RthJC RthCH trr IRM mA V K/W ns A IF=1A; -di/dt=200A/us; VR=30V; TVJ=25oC VR=100V; IF=50A; -diF/dt=100A/us; TVJ=100 C o 35 6 FEATURES * International standard package miniBLOC * Isolation voltage 2500 V~ * 2 independent FRED in 1 package * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour APPLICATIONS * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders ADVANTAGES * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch HUR2X30-60 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode 70 A 60 IF 50 TVJ=150C 3000 T = 100C nC VVJ = 300V R 2500 50 T = 100C A VVJ= 300V R IF= 60A IF= 30A IF= 15A Qr 2000 1500 1000 IF= 60A IF= 30A IF= 15A IRM 40 40 TVJ=100C 30 30 20 TVJ=25C 20 10 0 0.0 500 0 100 10 0 A/us 1000 -diF/dt 0 200 400 600 A/us 1000 800 -diF/dt 0.5 1.0 1.5 VF V2.0 Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 130 ns 120 TVJ= 100C VR = 300V Fig. 3 Peak reverse current IRM versus -diF/dt 20 V VFR tfr 15 VFR 2.0 1.2 us tfr 0.9 1.5 Kf 1.0 IRM trr 110 100 90 IF= 60A IF= 30A IF= 15A 10 0.6 0.5 Qr 5 80 70 0 40 80 120 C 160 TVJ 0 200 400 600 -diF/dt 800 A/us 1000 0 0 200 400 TVJ= 100C IF = 30A 0.3 0.0 0.0 600 A/us 1000 800 diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ 10 K/W 1 ZthJC 0.1 Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 4 Rthi (K/W) 0.436 0.482 0.117 0.115 ti (s) 0.0055 0.0092 0.0007 0.0418 0.01 0.001 0.0001 0.001 0.01 0.1 t s 1 Fig. 7 Transient thermal resistance junction to case |
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